IRG7PH46UDPbF transistor equivalent, insulated gate bipolar transistor.
*
*
*
*
*
*
*
* Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON).
* Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
* Rugged trans.
Image gallery
TAGS
Manufacturer
Related datasheet